M3966m Mosfet Verified (2024)

| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |-----------|--------|----------------|-----|-----|-----|------| | Drain-Source Voltage | ( V_DSS ) | ( V_GS=0V ), ( I_D=250\mu A ) | 20 | - | 30 | V | | Gate-Source Voltage | ( V_GSS ) | ±12V | - | - | ±12 | V | | Drain Current (Continuous) | ( I_D ) | ( T_A=25^\circ C ) | - | 3.0 | - | A | | Drain Current (Pulsed) | ( I_DM ) | ( t_p \leq 10\mu s ) | - | 10 | - | A | | Gate Threshold Voltage | ( V_GS(th) ) | ( V_DS=V_GS, I_D=250\mu A ) | 0.6 | 1.0 | 1.4 | V | | Static Drain-Source On-Resistance | ( R_DS(on) ) | ( V_GS=4.5V, I_D=2.5A ) | - | 45 | 60 | mΩ | | Input Capacitance | ( C_iss ) | ( V_DS=15V, f=1MHz ) | - | 300 | 400 | pF | | Turn-On Delay Time | ( t_d(on) ) | ( V_DD=15V, R_G=6\Omega ) | - | 8 | 15 | ns |

While you should always seek the specific datasheet for the exact manufacturer, a component carrying the M3966M marking typically falls into this performance window: m3966m mosfet verified

| Alternative Part | Package | Key Difference | |----------------|---------|----------------| | | SOT-23 | Lower ( R_DS(on) ) (30mΩ max), similar V_GS(th) | | SI2302 | SOT-23 | Slightly higher current rating (3.5A) | | IRLML2502 | SOT-23 | Enhanced ESD protection, logic level | | DMN2040U | SOT-23 | 20V V_DS, lower capacitance for high-speed switching | | 2N7002 | SOT-23 | Caution: Lower current (300mA) – not a direct substitute for high-power use | | Parameter | Symbol | Test Condition |

pull-down resistor from gate to ground to prevent accidental triggering if the control signal floats. m3966m mosfet verified